FQA47P06

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Mfr.Part #
FQA47P06
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET P-CH 60V 55A TO3P
Stock
77,203
In Stock :
77,203

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Published :
2001
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
214W Tc
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
26mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
60V
Series :
QFET®
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±25V
Datasheets
FQA47P06
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA47P06 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~175°C TJ, FQA47P06 pinout, FQA47P06 datasheet PDF, FQA47P06 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA47P06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA47P06


P-Channel Tube 26mOhm @ 27.5A, 10V ±25V 3600pF @ 25V 110nC @ 10V 60V TO-3P-3, SC-65-3

FQA47P06 Description


The FQA47P06 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. 



FQA47P06 Features


-47A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -23.5A

Low gate charge ( Typ. 84nC)

Low Crss ( Typ. 320pF)

100% avalanche tested

175°C maximum junction temperature rating



 FQA47P06 Applicaitons


  • Other Data Processing


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