FQA46N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Lead Free :

Lead Free

Fall Time (Typ) :

200 ns

Number of Pins :

3

Power Dissipation :

250W

Height :

20.1mm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Voltage - Rated DC :

150V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 hours ago)

ECCN Code :

EAR99

Factory Lead Time :

5 Weeks

Turn-Off Delay Time :

210 ns

Packaging :

Tube

Number of Terminations :

3

Resistance :

42mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

650 mJ

Weight :

6.401g

JESD-609 Code :

e3

Rise Time :

320ns

Power Dissipation-Max :

250W Tc

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

50A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pbfree Code :

yes

Threshold Voltage :

4V

Additional Feature :

FAST SWITCHING

Vgs (Max) :

±25V

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns

Rds On (Max) @ Id, Vgs :

42m Ω @ 25A, 10V

FET Type :

N-Channel

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Width :

5mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Package / Case :

TO-3P-3, SC-65-3

Radiation Hardening :

No

Length :

15.8mm

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Breakdown Voltage :

150V

Current Rating :

50A

Published :

2005