FQA46N15
- Mfr.Part #
- FQA46N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 50A TO3P
- Stock
- 359
- In Stock :
- 359
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Package / Case :
- TO-3P-3, SC-65-3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 35 ns
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 210 ns
- Pulsed Drain Current-Max (IDM) :
- 200A
- Vgs (Max) :
- ±25V
- Drain to Source Breakdown Voltage :
- 150V
- Weight :
- 6.401g
- Threshold Voltage :
- 4V
- ECCN Code :
- EAR99
- Width :
- 5mm
- Gate to Source Voltage (Vgs) :
- 25V
- Height :
- 20.1mm
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Factory Lead Time :
- 5 Weeks
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 25A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Power Dissipation :
- 250W
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- REACH SVHC :
- No SVHC
- Additional Feature :
- FAST SWITCHING
- Number of Elements :
- 1
- Series :
- QFET®
- Voltage - Rated DC :
- 150V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 200 ns
- JESD-609 Code :
- e3
- Current Rating :
- 50A
- Pbfree Code :
- yes
- Length :
- 15.8mm
- Rise Time :
- 320ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 250W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 42mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 50A
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FQA46N15
FQA46N15 Documents

N-Channel Tube 42m Ω @ 25A, 10V ±25V 3250pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3
FQA46N15 Description
The FQA7N80 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
FQA46N15 Features
-
50A, 150V
-
RDS(on) = 42mΩ(Max.) @VGS = 10 V, ID = 25A
-
Low Gate Charge ( Typ. 85nC)
-
Low Crss ( Typ. 100pF)
-
100% Avalanche Tested
-
175°C Maximum Junction Temperature Rating
FQA46N15 Applications
-
Other Audio & Video
-
Switched Mode Power Supplies
-
Audio Amplifiers
-
DC Motor Control
-
Variable Switching Power Applications
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