FQA44N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation-Max :

310W Tc

Width :

5mm

Rise Time :

470ns

Fall Time (Typ) :

230 ns

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

1700 mJ

ECCN Code :

EAR99

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current Rating :

43.5A

Published :

2013

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

43.5A Tc

Continuous Drain Current (ID) :

43.5A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

174A

Turn-Off Delay Time :

240 ns

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

69m Ω @ 21.75A, 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

310W

Height :

20.1mm

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Turn On Delay Time :

85 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.069Ohm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Length :

15.8mm

Number of Elements :

1

Voltage - Rated DC :

300V

Weight :

6.401g

Series :

QFET®

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

300V