FQA40N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Package / Case :

TO-3P-3, SC-65-3

Rise Time :

580ns

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Number of Pins :

3

Weight :

6.401g

Power Dissipation :

280W

Rds On (Max) @ Id, Vgs :

70m Ω @ 20A, 10V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Series :

QFET®

FET Type :

N-Channel

Vgs (Max) :

±30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

18.9mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

9 Weeks

Drain to Source Breakdown Voltage :

250V

Turn-Off Delay Time :

120 ns

Turn On Delay Time :

70 ns

Continuous Drain Current (ID) :

40A

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

800 mJ

Drain-source On Resistance-Max :

0.07Ohm

Packaging :

Tube

Width :

5mm

Number of Elements :

1

Mount :

Through Hole

Power Dissipation-Max :

280W Tc

Lead Free :

Lead Free

Contact Plating :

Tin

Length :

15.8mm

Radiation Hardening :

No

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

250V

Current Rating :

40A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

Fall Time (Typ) :

165 ns

Number of Terminations :

3