FP50R07U1E4BPSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Published :

2002

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

IGBT Type :

Trench Field Stop

Collector Emitter Saturation Voltage :

1.55V

Collector Emitter Voltage (VCEO) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Elements :

7

Number of Pins :

1

Polarity/Channel Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Halogen Free :

Not Halogen Free

Max Power Dissipation :

230W

Configuration :

Three Phase Inverter

Transistor Element Material :

SILICON

Power - Max :

230W

Transistor Application :

POWER CONTROL

Current - Collector Cutoff (Max) :

1mA

Turn On Time :

40 ns

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 50A

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Current - Collector (Ic) (Max) :

75A

Input :

Standard

Surface Mount :

No

Input Capacitance (Cies) @ Vce :

3.1nF @ 25V

Package / Case :

Module

Number of Terminations :

23

Lead Free :

Contains Lead

Terminal Position :

UPPER

Operating Temperature :

-40°C~150°C

Additional Feature :

UL APPROVED

Turn Off Time-Nom (toff) :

274 ns

NTC Thermistor :

yes

JESD-30 Code :

R-XUFM-X23