FMG11AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

hFE Min :

80

Published :

2001

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

300mW

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-G5

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transition Frequency :

250MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 NPN - Pre-Biased (Dual)

Pin Count :

5

Radiation Hardening :

No

Max Power Dissipation :

300mW

Current Rating :

100mA

Transistor Application :

SWITCHING

Number of Terminations :

5

Max Output Current :

100mA

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47k Ω

VCEsat-Max :

0.3 V

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

300mV

Resistor - Base (R1) :

2.2k Ω

Current - Collector Cutoff (Max) :

500nA

Mount :

Surface Mount

Polarity :

NPN

Operating Supply Voltage :

50V

Base Part Number :

*MG11

Mounting Type :

Surface Mount

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

Number of Elements :

2

Transistor Element Material :

SILICON

Package / Case :

SC-74A, SOT-753

Lead Free :

Lead Free

Frequency - Transition :

250MHz

JESD-609 Code :

e1