FMBS5551
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- Mfr.Part #
- FMBS5551
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SUPERSOT-6
- Stock
- 38,631
- In Stock ：
- 38,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- SuperSOT™-6
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Power - Max :
- 700mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 300MHz
- Published :
- 2009
- Transistor Type :
- NPN
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Datasheets
- FMBS5551
NPN -55°C~150°C TJ 50nA ICBO SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBS5551 Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Product comes in the supplier's device package SuperSOT™-6.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
FMBS5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of SuperSOT™-6
FMBS5551 Applications
There are a lot of ON Semiconductor
FMBS5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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