FMBS2383

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

630mW

Transistor Element Material :

SILICON

Transition Frequency :

120MHz

Pbfree Code :

yes

Height :

1mm

Collector Emitter Voltage (VCEO) :

160V

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

6 Weeks

Length :

3mm

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Collector Emitter Saturation Voltage :

1V

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Max Power Dissipation :

630mW

Packaging :

Tape and Reel (TR)

Base Part Number :

FMBS2383

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 5V

Max Collector Current :

800mA

Frequency :

120MHz

hFE Min :

80

Terminal Form :

Gull wing

Radiation Hardening :

No

Lifecycle Status :

LIFETIME (Last Updated: 6 days ago)

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Published :

2011

Collector Base Voltage (VCBO) :

160V

RoHS Status :

ROHS3 Compliant

Width :

1.7mm

Weight :

36mg

Number of Pins :

6

Max Breakdown Voltage :

160V

Mounting Type :

Surface Mount

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

160V

ECCN Code :

EAR99

Element Configuration :

Single

Mount :

Surface Mount