FMBSA56
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- Mfr.Part #
- FMBSA56
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SUPERSOT-6
- Stock
- 25,037
- In Stock ：
- 25,037
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SuperSOT™-6
- Frequency - Transition :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Current - Collector (Ic) (Max) :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 700mW
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- FMBSA56
PNP -55°C~150°C TJ 100nA SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBSA56 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.SuperSOT™-6 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
FMBSA56 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of SuperSOT™-6
FMBSA56 Applications
There are a lot of ON Semiconductor
FMBSA56 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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