FMBA56
- Mfr.Part #
- FMBA56
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SUPERSOT-6
- Stock
- 974
- In Stock :
- 974
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Length :
- 3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- hFE Min :
- 100
- Power Dissipation :
- 700mW
- Published :
- 2008
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Transistor Application :
- AMPLIFIER
- Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Width :
- 1.7mm
- Element Configuration :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -4V
- Max Collector Current :
- 500mA
- Transition Frequency :
- 50MHz
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 6 Weeks
- Weight :
- 36mg
- Base Part Number :
- FMBA56
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Elements :
- 2
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Terminations :
- 6
- Collector Base Voltage (VCBO) :
- -80V
- Height :
- 1mm
- Current Rating :
- -500mA
- Max Power Dissipation :
- 700mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 80V
- Datasheets
- FMBA56
FMBA56 Documents

PNP -55°C~150°C TJ 100nA 2 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBA56 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
FMBA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
FMBA56 Applications
There are a lot of ON Semiconductor
FMBA56 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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