FMBA56
- Mfr.Part #
- FMBA56
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SUPERSOT-6
- Stock
- 7,165
- In Stock :
- 7,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 700mW
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- RoHS Compliant
- Published :
- 2008
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Frequency :
- 50MHz
- Number of Terminations :
- 6
- Number of Elements :
- 2
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 36mg
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 50MHz
- Current Rating :
- -500mA
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- -80V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Height :
- 1mm
- Length :
- 3mm
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 700mW
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 50MHz
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Emitter Base Voltage (VEBO) :
- -4V
- Max Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- -80V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Dual
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 100
- Base Part Number :
- FMBA56
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Number of Pins :
- 6
- Width :
- 1.7mm
- Mounting Type :
- Surface Mount
- Datasheets
- FMBA56
FMBA56 Documents

PNP -55°C~150°C TJ 100nA 2 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBA56 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
FMBA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
FMBA56 Applications
There are a lot of ON Semiconductor
FMBA56 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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