FMBA56
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- Mfr.Part #
- FMBA56
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SUPERSOT-6
- Stock
- 7,165
- In Stock ：
- 7,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- Length :
- 3mm
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Dual
- Gain Bandwidth Product :
- 50MHz
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Weight :
- 36mg
- Height :
- 1mm
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Breakdown Voltage :
- 80V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 6
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 700mW
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -80V
- Transistor Type :
- PNP
- Width :
- 1.7mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 50MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- -4V
- Published :
- 2008
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 700mW
- Polarity/Channel Type :
- PNP
- Current Rating :
- -500mA
- Mount :
- Surface Mount
- Base Part Number :
- FMBA56
- hFE Min :
- 100
- Number of Elements :
- 2
- Collector Emitter Saturation Voltage :
- 250mV
- Voltage - Rated DC :
- -80V
- Datasheets
- FMBA56
PNP -55°C~150°C TJ 100nA 2 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBA56 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
FMBA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
FMBA56 Applications
There are a lot of ON Semiconductor
FMBA56 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FMBA06 | onsemi | 2,638 | TRANS NPN 80V 0.5A SSOT-6 |
| FMBA14 | onsemi | 15,882 | SMALL SIGNAL BIPOLAR TRANSISTOR, |
| FMBA14 | onsemi | 15,882 | TRANS 2NPN 30V 1.2A SUPERSOT-6 |
| FMBA56 | onsemi | 974 | TRANS PNP 80V 0.5A SUPERSOT-6 |
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