FMBA14

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Weight :

36mg

Transistor Application :

AMPLIFIER

Height :

1mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

30V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

30V

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Number of Terminations :

6

Number of Pins :

6

Max Breakdown Voltage :

30V

Collector Base Voltage (VCBO) :

30V

Transition Frequency :

200MHz

Transistor Type :

2 NPN (Dual)

Base Part Number :

FMBA14

Width :

1.7mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Power Dissipation :

700mW

Current Rating :

1.2A

Max Collector Current :

1.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

hFE Min :

20000

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V

Mount :

Surface Mount

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.5V

Pbfree Code :

yes

Length :

3mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

Published :

2000

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Frequency - Transition :

1.25MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA 5V

Number of Elements :

2

Emitter Base Voltage (VEBO) :

10V