FJX992TF
- Mfr.Part #
- FJX992TF
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SOT323
- Stock
- 2,025
- In Stock :
- 2,025
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 120V
- hFE Min :
- 200
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.25mm
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- FJX992
- Power Dissipation :
- 235mW
- Max Breakdown Voltage :
- 120V
- Collector Base Voltage (VCBO) :
- -120V
- Height :
- 1mm
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Published :
- 2017
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 120V
- Length :
- 2mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Weight :
- 30mg
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 235mW
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- SC-70, SOT-323
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Datasheets
- FJX992TF

PNP -55°C~150°C TJ 100nA ICBO 1 Elements PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX992TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 120V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJX992TF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
FJX992TF Applications
There are a lot of ON Semiconductor
FJX992TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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