FJX992TF
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- Mfr.Part #
- FJX992TF
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SOT323
- Stock
- 2,025
- In Stock ：
- 2,025
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1mm
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 120V
- Weight :
- 30mg
- Width :
- 1.25mm
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- FJX992
- Power Dissipation :
- 235mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -120V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Max Power Dissipation :
- 235mW
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 120V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2017
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- hFE Min :
- 200
- Length :
- 2mm
- Collector Emitter Voltage (VCEO) :
- 120V
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- FJX992TF
FJX992TF Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX992TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 120V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJX992TF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
FJX992TF Applications
There are a lot of ON Semiconductor
FJX992TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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