FJX945GTF
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- Mfr.Part #
- FJX945GTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT323
- Stock
- 6,301
- In Stock ：
- 6,301
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 150mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Published :
- 2004
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 300MHz
- Voltage - Rated DC :
- 50V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Weight :
- 30mg
- Terminal Form :
- Gull wing
- Max Collector Current :
- 150mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 150mV
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Height :
- 900μm
- Length :
- 2mm
- hFE Min :
- 70
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 50V
- Qualification Status :
- Not Qualified
- Base Part Number :
- FJX945
- Width :
- 1.25mm
- Datasheets
- FJX945GTF
FJX945GTF Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX945GTF Overview
DC current gain in this device equals 200 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
FJX945GTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
FJX945GTF Applications
There are a lot of ON Semiconductor
FJX945GTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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