FJX945GTF
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- Mfr.Part #
- FJX945GTF
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT323
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Width :
- 1.25mm
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Max Collector Current :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 6 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- SC-70, SOT-323
- Pbfree Code :
- yes
- Base Part Number :
- FJX945
- Power Dissipation :
- 200mW
- Terminal Finish :
- Tin (Sn)
- Weight :
- 30mg
- Length :
- 2mm
- Max Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 150mV
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- hFE Min :
- 70
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Gain Bandwidth Product :
- 300MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 150mA
- Transition Frequency :
- 300MHz
- Frequency :
- 300MHz
- Terminal Position :
- Dual
- Published :
- 2004
- Element Configuration :
- Single
- Height :
- 900μm
- Qualification Status :
- Not Qualified
- Datasheets
- FJX945GTF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX945GTF Overview
DC current gain in this device equals 200 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
FJX945GTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
FJX945GTF Applications
There are a lot of ON Semiconductor
FJX945GTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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