FJV1845EMTF
- Mfr.Part #
- FJV1845EMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23
- Stock
- 9,916
- In Stock :
- 9,916
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 50mA
- Height :
- 1.04mm
- Max Collector Current :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 120V
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 30mg
- Base Part Number :
- FJV1845
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 120V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 70mV
- Length :
- 2.9mm
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 1mA 6V
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 120V
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 110MHz
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transition Frequency :
- 110MHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 120V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 120V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FJV1845EMTF

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845EMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
FJV1845EMTF Features
the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845EMTF Applications
There are a lot of ON Semiconductor
FJV1845EMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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