FJV1845EMTF
- Mfr.Part #
- FJV1845EMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23
- Stock
- 9,916
- In Stock :
- 9,916
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.9mm
- Frequency - Transition :
- 110MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 120V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- FJV1845
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 110MHz
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 120V
- Width :
- 1.3mm
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 120V
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Published :
- 2002
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Polarity/Channel Type :
- NPN
- Current Rating :
- 50mA
- Max Collector Current :
- 50mA
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 70mV
- Height :
- 1.04mm
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 1mA 6V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Weight :
- 30mg
- Terminal Position :
- Dual
- hFE Min :
- 200
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FJV1845EMTF
FJV1845EMTF Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845EMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
FJV1845EMTF Features
the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845EMTF Applications
There are a lot of ON Semiconductor
FJV1845EMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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