FJV1845PMTF
- Mfr.Part #
- FJV1845PMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23-3
- Stock
- 15,054
- In Stock :
- 15,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- hFE Min :
- 200
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 120V
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Frequency - Transition :
- 110MHz
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 120V
- Published :
- 2002
- Number of Pins :
- 3
- Transition Frequency :
- 110MHz
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 70mV
- Base Part Number :
- FJV1845
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 50mA
- Collector Emitter Voltage (VCEO) :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Width :
- 1.3mm
- Current Rating :
- 50mA
- Height :
- 1.04mm
- Collector Emitter Breakdown Voltage :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- Datasheets
- FJV1845PMTF
FJV1845PMTF Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845PMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 70mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 120V volts.When collector current reaches its maximum, it can reach 50mA volts.
FJV1845PMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845PMTF Applications
There are a lot of ON Semiconductor
FJV1845PMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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