FJV1845PMTF
- Mfr.Part #
- FJV1845PMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23-3
- Stock
- 15,054
- In Stock :
- 15,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 120V
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Breakdown Voltage :
- 120V
- Frequency - Transition :
- 110MHz
- Qualification Status :
- Not Qualified
- Weight :
- 30mg
- Transition Frequency :
- 110MHz
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Max Collector Current :
- 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 120V
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Height :
- 1.04mm
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 2.9mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Published :
- 2002
- Base Part Number :
- FJV1845
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- hFE Min :
- 200
- Collector Emitter Saturation Voltage :
- 70mV
- ECCN Code :
- EAR99
- Current Rating :
- 50mA
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 120V
- Datasheets
- FJV1845PMTF

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845PMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 70mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 120V volts.When collector current reaches its maximum, it can reach 50mA volts.
FJV1845PMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845PMTF Applications
There are a lot of ON Semiconductor
FJV1845PMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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