FJV1845EMTF
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- Mfr.Part #
- FJV1845EMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23-3
- Stock
- 9,916
- In Stock ：
- 9,916
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Width :
- 1.3mm
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 70mV
- Published :
- 2002
- Weight :
- 30mg
- Collector Emitter Breakdown Voltage :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 120V
- Transistor Element Material :
- SILICON
- Height :
- 1.04mm
- Collector Base Voltage (VCBO) :
- 120V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Base Part Number :
- FJV1845
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 110MHz
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 200
- Number of Elements :
- 1
- Max Collector Current :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 1mA 6V
- Frequency - Transition :
- 110MHz
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Current Rating :
- 50mA
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Datasheets
- FJV1845EMTF
FJV1845EMTF Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845EMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
FJV1845EMTF Features
the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845EMTF Applications
There are a lot of ON Semiconductor
FJV1845EMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJV1845EMTF | onsemi | 9,916 | TRANS NPN 120V 0.05A SOT23 |
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| FJV1845UMTF | onsemi | 7,070 | TRANS NPN 120V 0.05A SOT23-3 |
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