FJV1845EMTF
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- Mfr.Part #
- FJV1845EMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23-3
- Stock
- 9,916
- In Stock ：
- 9,916
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 120V
- Number of Elements :
- 1
- Base Part Number :
- FJV1845
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 1mA 6V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 120V
- Width :
- 1.3mm
- Frequency - Transition :
- 110MHz
- Max Collector Current :
- 50mA
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 300mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transition Frequency :
- 110MHz
- Pbfree Code :
- yes
- Length :
- 2.9mm
- Factory Lead Time :
- 6 Weeks
- Published :
- 2002
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 120V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 70mV
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Height :
- 1.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 120V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 50mA
- Max Power Dissipation :
- 300mW
- Datasheets
- FJV1845EMTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845EMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
FJV1845EMTF Features
the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845EMTF Applications
There are a lot of ON Semiconductor
FJV1845EMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJV1845EMTF | onsemi | 9,916 | TRANS NPN 120V 0.05A SOT23 |
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