FJPF5021OTU
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- Mfr.Part #
- FJPF5021OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220F-3
- Stock
- 3,290
- In Stock ：
- 3,290
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 15MHz
- Number of Pins :
- 3
- Mount :
- Through Hole
- Width :
- 4.7mm
- Number of Elements :
- 1
- hFE Min :
- 15
- Collector Base Voltage (VCBO) :
- 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 600mA 5V
- Collector Emitter Saturation Voltage :
- 1V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 11 Weeks
- Transition Frequency :
- 15MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 500V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Collector Emitter Voltage (VCEO) :
- 500V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 15MHz
- Max Power Dissipation :
- 40W
- Published :
- 2003
- Transistor Type :
- NPN
- Length :
- 10.16mm
- Voltage - Rated DC :
- 500V
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Weight :
- 2.27g
- Base Part Number :
- FJPF5021
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Height :
- 15.87mm
- Current Rating :
- 5A
- Datasheets
- FJPF5021OTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF5021OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 600mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJPF5021OTU Features
the DC current gain for this device is 20 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 15MHz
FJPF5021OTU Applications
There are a lot of ON Semiconductor
FJPF5021OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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