FJPF5021OTU
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- Mfr.Part #
- FJPF5021OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220F-3
- Stock
- 3,290
- In Stock ：
- 3,290
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 500V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Height :
- 15.87mm
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Current Rating :
- 5A
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 15MHz
- Collector Base Voltage (VCBO) :
- 800V
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 600mA 5V
- Transistor Application :
- SWITCHING
- hFE Min :
- 15
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Transition Frequency :
- 15MHz
- Length :
- 10.16mm
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Factory Lead Time :
- 11 Weeks
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.7mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Power Dissipation :
- 40W
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- FJPF5021
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Frequency :
- 15MHz
- Max Power Dissipation :
- 40W
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 500V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Weight :
- 2.27g
- Datasheets
- FJPF5021OTU
FJPF5021OTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF5021OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 600mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJPF5021OTU Features
the DC current gain for this device is 20 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 15MHz
FJPF5021OTU Applications
There are a lot of ON Semiconductor
FJPF5021OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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