FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Base Voltage (VCBO) :
- 1.1kV
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 5 Weeks
- Operating Temperature :
- -55°C~125°C TJ
- Gain Bandwidth Product :
- 15MHz
- Height :
- 16.07mm
- Collector Emitter Breakdown Voltage :
- 800V
- Case Connection :
- Isolated
- Weight :
- 2.27g
- JESD-609 Code :
- e3
- hFE Min :
- 20
- Mounting Type :
- Through Hole
- Power Dissipation :
- 40W
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.36mm
- Packaging :
- Tube
- Mount :
- Through Hole
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 40W
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- Series :
- ESBC™
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Transition Frequency :
- 28.4MHz
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 159mV
- Width :
- 4.9mm
- Pbfree Code :
- yes
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 800V
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- FJPF2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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