FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 40W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Collector Emitter Breakdown Voltage :
- 800V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Max Collector Current :
- 5A
- Collector Emitter Voltage (VCEO) :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~125°C TJ
- hFE Min :
- 20
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Height :
- 16.07mm
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 1.1kV
- Factory Lead Time :
- 5 Weeks
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Transition Frequency :
- 28.4MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Application :
- SWITCHING
- Weight :
- 2.27g
- Length :
- 10.36mm
- Width :
- 4.9mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- Series :
- ESBC™
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Case Connection :
- Isolated
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 40W
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 159mV
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FJPF2145TU
FJPF2145TU Documents
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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