FJNS3202RTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mount :

Through Hole

Resistor - Base (R1) :

10 k Ω

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

RoHS Status :

RoHS Compliant

Max Collector Current :

100mA

Packaging :

Tape and Box (TB)

hFE Min :

30

Number of Pins :

3

Power Dissipation :

300mW

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Frequency - Transition :

250MHz

Current Rating :

100mA

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Published :

2002

Continuous Collector Current :

100mA

Emitter Base Voltage (VEBO) :

10V

Polarity :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Package / Case :

TO-226-3, TO-92-3 Short Body

Element Configuration :

Single

Transistor Type :

NPN - Pre-Biased