FJD5555TM

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Mfr.Part #
FJD5555TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 400V 5A TO252AA
Stock
26,194
In Stock :
26,194

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
14V
Element Configuration :
Single
Polarity/Channel Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Collector Base Voltage (VCBO) :
1.05kV
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Breakdown Voltage :
400V
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Factory Lead Time :
17 Weeks
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Published :
2014
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
JESD-30 Code :
R-PSSO-G2
Case Connection :
COLLECTOR
Collector Emitter Voltage (VCEO) :
400V
Collector Emitter Breakdown Voltage :
400V
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Max Collector Current :
5A
Number of Terminations :
2
Weight :
260.37mg
Radiation Hardening :
No
Base Part Number :
FJD5555
ECCN Code :
EAR99
Mount :
Surface Mount
Max Power Dissipation :
1.34W
Power Dissipation :
1.34W
Transistor Element Material :
SILICON
Transistor Type :
NPN
hFE Min :
20
Datasheets
FJD5555TM
Introducing Transistors - Bipolar (BJT) - Single onsemi FJD5555TM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:2, Base Part Number:FJD5555, FJD5555TM pinout, FJD5555TM datasheet PDF, FJD5555TM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJD5555TM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJD5555TM


NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

FJD5555TM Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 800mA 3V.When VCE saturation is 1.5V @ 1A, 3.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 14V can achieve high levels of efficiency.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 5A volts can be achieved.

FJD5555TM Features


the DC current gain for this device is 20 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V


FJD5555TM Applications


There are a lot of ON Semiconductor
FJD5555TM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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