FJD5304DTF
- Mfr.Part #
- FJD5304DTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO252AA
- Stock
- 4,015
- In Stock :
- 4,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 2.5A
- Length :
- 6.73mm
- Max Collector Current :
- 4A
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 400V
- hFE Min :
- 8
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Current Rating :
- 4A
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 400V
- Voltage - Rated DC :
- 400V
- Collector Base Voltage (VCBO) :
- 700V
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Width :
- 6.22mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 30W
- Height :
- 2.39mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1.25W
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 400V
- Published :
- 2010
- Number of Pins :
- 3
- Base Part Number :
- FJD5304
- Emitter Base Voltage (VEBO) :
- 12V
- Datasheets
- FJD5304DTF
FJD5304DTF Documents

NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD5304DTF Overview
This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.As a result, it can handle voltages as low as 400V volts.The maximum collector current is 4A volts.
FJD5304DTF Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A
FJD5304DTF Applications
There are a lot of ON Semiconductor
FJD5304DTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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