FJD5553TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Power Dissipation :

1.25W

Collector Emitter Saturation Voltage :

500mV

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Max Collector Current :

3A

Number of Pins :

3

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

400V

Number of Elements :

1

Weight :

260.37mg

Max Breakdown Voltage :

400V

Emitter Base Voltage (VEBO) :

14V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA 3V

Base Part Number :

FJD5553

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 1A

Height :

2.39mm

Collector Emitter Breakdown Voltage :

400V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Published :

2013

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Base Voltage (VCBO) :

1.05kV

Max Power Dissipation :

1.25W

Transistor Type :

NPN

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Width :

6.22mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

hFE Min :

30

Mounting Type :

Surface Mount

Length :

6.73mm

Polarity/Channel Type :

NPN