FJD5553TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Transistor Type :

NPN

Length :

6.73mm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

150°C TJ

Width :

6.22mm

Collector Emitter Voltage (VCEO) :

400V

Collector Base Voltage (VCBO) :

1.05kV

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2013

Collector Emitter Saturation Voltage :

500mV

Number of Pins :

3

Height :

2.39mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA 3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.25W

Max Collector Current :

3A

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

14V

Collector Emitter Breakdown Voltage :

400V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.25W

hFE Min :

30

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

400V

JESD-30 Code :

R-PSSO-G2

Weight :

260.37mg

Base Part Number :

FJD5553

Mount :

Surface Mount

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 1A

Factory Lead Time :

4 Weeks