FJAFS1510ATU
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- Mfr.Part #
- FJAFS1510ATU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 750V 6A TO3PF
- Stock
- 11,179
- In Stock ：
- 11,179
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 60W
- Transition Frequency :
- 15.4MHz
- Mount :
- Through Hole
- Length :
- 15.5mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Pbfree Code :
- yes
- Height :
- 14.5mm
- Frequency - Transition :
- 15.4MHz
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1.5A, 6A
- Collector Base Voltage (VCBO) :
- 1.55kV
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~125°C TJ
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Additional Feature :
- AVALANCHE RATED
- Max Frequency :
- 1MHz
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA
- Weight :
- 6.962g
- Case Connection :
- Isolated
- Max Collector Current :
- 6A
- Packaging :
- Tube
- Max Power Dissipation :
- 60W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7 @ 3A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 750V
- hFE Min :
- 15
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-3P-3 Full Pack
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 750V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Width :
- 5.5mm
- Mounting Type :
- Through Hole
- Series :
- ESBC™
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- FJAFS1510ATU
FJAFS1510ATU Documents
NPN -55°C~125°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1510ATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7 @ 3A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1.5A, 6A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 15.4MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor
FJAFS1510ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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