FGL60N100BNTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Turn On Time :

460 ns

Width :

5mm

Packaging :

Tube

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

1kV

Collector Emitter Saturation Voltage :

1.5V

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

1.2 μs

Height :

26mm

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Test Condition :

600V, 60A, 51 Ω, 15V

Turn Off Time-Nom (toff) :

760 ns

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Current - Collector Pulsed (Icm) :

120A

Voltage - Collector Emitter Breakdown (Max) :

1000V

Max Power Dissipation :

180W

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Pbfree Code :

yes

Gate Charge :

275nC

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Package / Case :

TO-264-3, TO-264AA

Number of Elements :

1

Current Rating :

60A

Td (on/off) @ 25°C :

140ns/630ns

Mounting Type :

Through Hole

JESD-609 Code :

e3

Weight :

6.756g

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Power Dissipation :

180W

Radiation Hardening :

No

Input Type :

Standard

Collector Emitter Breakdown Voltage :

1kV

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

1kV

Max Collector Current :

60A

IGBT Type :

NPT and Trench

Length :

20mm

Transistor Element Material :

SILICON