FGL60N100BNTD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

1000V

Mounting Type :

Through Hole

Height :

26mm

Current Rating :

60A

Polarity :

NPN

IGBT Type :

NPT and Trench

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Element Configuration :

Single

Width :

5mm

Current - Collector Pulsed (Icm) :

120A

Collector Emitter Voltage (VCEO) :

1kV

Gate Charge :

275nC

Reverse Recovery Time :

1.2 μs

Pbfree Code :

yes

Length :

20mm

Input Type :

Standard

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1.5V

Collector Emitter Breakdown Voltage :

600V

Published :

2017

Number of Terminations :

3

Voltage - Rated DC :

1kV

Weight :

6.756g

Number of Elements :

1

Package / Case :

TO-264-3, TO-264AA

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

760 ns

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Test Condition :

600V, 60A, 51 Ω, 15V

Lead Free :

Lead Free

Turn On Time :

460 ns

Rise Time :

320ns

Max Collector Current :

60A

Td (on/off) @ 25°C :

140ns/630ns

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Max Power Dissipation :

180W

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

HTS Code :

8541.29.00.95

Power Dissipation :

180W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Max Breakdown Voltage :

1kV