FGL60N100BNTD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

MATTE TIN

Max Power Dissipation :

180W

Number of Pins :

3

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

760 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

TO-264-3, TO-264AA

Max Breakdown Voltage :

1kV

Power Dissipation :

180W

Max Collector Current :

60A

Width :

5mm

Test Condition :

600V, 60A, 51 Ω, 15V

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Collector Emitter Breakdown Voltage :

600V

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

1kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

320ns

Length :

20mm

HTS Code :

8541.29.00.95

Collector Emitter Voltage (VCEO) :

1kV

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate Charge :

275nC

IGBT Type :

NPT and Trench

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.5V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Td (on/off) @ 25°C :

140ns/630ns

Turn On Time :

460 ns

Weight :

6.756g

Radiation Hardening :

No

Height :

26mm

Current Rating :

60A

Published :

2017

REACH SVHC :

No SVHC

Input Type :

Standard

Polarity :

NPN

Voltage - Collector Emitter Breakdown (Max) :

1000V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Current - Collector Pulsed (Icm) :

120A

Reverse Recovery Time :

1.2 μs