FGL60N100BNTD

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Mfr.Part #
FGL60N100BNTD
Manufacturer
onsemi
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
1000V, 60A, NPT TRENCH IGBT
Stock
610
In Stock :
610

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Max Power Dissipation :
180W
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.5V
Packaging :
Tube
Reverse Recovery Time :
1.2 μs
Number of Elements :
1
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5mm
Pbfree Code :
yes
Published :
2017
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
HTS Code :
8541.29.00.95
IGBT Type :
NPT and Trench
Test Condition :
600V, 60A, 51 Ω, 15V
Factory Lead Time :
4 Weeks
Power Dissipation :
180W
Vce(on) (Max) @ Vge, Ic :
2.9V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max) :
1000V
Mounting Type :
Through Hole
Lead Free :
Lead Free
Mount :
Through Hole
Height :
26mm
ECCN Code :
EAR99
Length :
20mm
Current Rating :
60A
Max Collector Current :
60A
Turn Off Time-Nom (toff) :
760 ns
Collector Emitter Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Current - Collector Pulsed (Icm) :
120A
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 6 days ago)
Gate Charge :
275nC
Terminal Finish :
MATTE TIN
Turn On Time :
460 ns
Operating Temperature :
-55°C~150°C TJ
Weight :
6.756g
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
1kV
Rise Time :
320ns
Voltage - Rated DC :
1kV
Number of Pins :
3
Transistor Application :
POWER CONTROL
JESD-609 Code :
e3
Package / Case :
TO-264-3, TO-264AA
Input Type :
Standard
Td (on/off) @ 25°C :
140ns/630ns
Number of Terminations :
3
Max Breakdown Voltage :
1kV
Introducing Transistors - IGBTs - Single onsemi FGL60N100BNTD from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, FGL60N100BNTD pinout, FGL60N100BNTD datasheet PDF, FGL60N100BNTD amp .Beyond Transistors - IGBTs - Single onsemi FGL60N100BNTD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGL60N100BNTD


FGL60N100BNTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGL60N100BNTD Description


FGL60N100BNTD 1000V NPT IGBT features ON Semiconductor's proprietary trench design and advanced NPT technology to provide excellent turn-on and switching performance, high avalanche durability, and easy parallel operation. This device provides optimum performance for hard switching applications such as UPS and welding machines.



FGL60N100BNTD Features


  • High-speed switch

  • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60A

  • High input impedance

  • Built-in fast recovery diode



FGL60N100BNTD Applications


  • UPS

  • Other industries


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