FGL60N100BNTD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

180W

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.5V

Packaging :

Tube

Reverse Recovery Time :

1.2 μs

Number of Elements :

1

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5mm

Pbfree Code :

yes

Published :

2017

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

HTS Code :

8541.29.00.95

IGBT Type :

NPT and Trench

Test Condition :

600V, 60A, 51 Ω, 15V

Factory Lead Time :

4 Weeks

Power Dissipation :

180W

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Voltage - Collector Emitter Breakdown (Max) :

1000V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Mount :

Through Hole

Height :

26mm

ECCN Code :

EAR99

Length :

20mm

Current Rating :

60A

Max Collector Current :

60A

Turn Off Time-Nom (toff) :

760 ns

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

120A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Gate Charge :

275nC

Terminal Finish :

MATTE TIN

Turn On Time :

460 ns

Operating Temperature :

-55°C~150°C TJ

Weight :

6.756g

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

1kV

Rise Time :

320ns

Voltage - Rated DC :

1kV

Number of Pins :

3

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

Package / Case :

TO-264-3, TO-264AA

Input Type :

Standard

Td (on/off) @ 25°C :

140ns/630ns

Number of Terminations :

3

Max Breakdown Voltage :

1kV