FGL60N100BNTD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

275nC

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Collector Emitter Saturation Voltage :

1.5V

Voltage - Collector Emitter Breakdown (Max) :

1000V

Rise Time :

320ns

Length :

20mm

Number of Pins :

3

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Weight :

6.756g

IGBT Type :

NPT and Trench

Factory Lead Time :

4 Weeks

Height :

26mm

Td (on/off) @ 25°C :

140ns/630ns

Turn On Time :

460 ns

Max Collector Current :

60A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Input Type :

Standard

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Transistor Element Material :

SILICON

Pbfree Code :

yes

Voltage - Rated DC :

1kV

ECCN Code :

EAR99

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

120A

Reverse Recovery Time :

1.2 μs

Transistor Application :

POWER CONTROL

Power Dissipation :

180W

Mount :

Through Hole

Published :

2017

Polarity :

NPN

Current Rating :

60A

Max Breakdown Voltage :

1kV

Collector Emitter Voltage (VCEO) :

1kV

Number of Elements :

1

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Max Power Dissipation :

180W

Radiation Hardening :

No

Packaging :

Tube

JESD-609 Code :

e3

Element Configuration :

Single

Turn Off Time-Nom (toff) :

760 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

600V

Test Condition :

600V, 60A, 51 Ω, 15V

Width :

5mm