FGL60N100BNTD
- Mfr.Part #
- FGL60N100BNTD
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- 1000V, 60A, NPT TRENCH IGBT
- Stock
- 610
- In Stock :
- 610
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 275nC
- Vce(on) (Max) @ Vge, Ic :
- 2.9V @ 15V, 60A
- Collector Emitter Saturation Voltage :
- 1.5V
- Voltage - Collector Emitter Breakdown (Max) :
- 1000V
- Rise Time :
- 320ns
- Length :
- 20mm
- Number of Pins :
- 3
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 6.756g
- IGBT Type :
- NPT and Trench
- Factory Lead Time :
- 4 Weeks
- Height :
- 26mm
- Td (on/off) @ 25°C :
- 140ns/630ns
- Turn On Time :
- 460 ns
- Max Collector Current :
- 60A
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- Input Type :
- Standard
- Number of Terminations :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 1kV
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Current - Collector Pulsed (Icm) :
- 120A
- Reverse Recovery Time :
- 1.2 μs
- Transistor Application :
- POWER CONTROL
- Power Dissipation :
- 180W
- Mount :
- Through Hole
- Published :
- 2017
- Polarity :
- NPN
- Current Rating :
- 60A
- Max Breakdown Voltage :
- 1kV
- Collector Emitter Voltage (VCEO) :
- 1kV
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Max Power Dissipation :
- 180W
- Radiation Hardening :
- No
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Turn Off Time-Nom (toff) :
- 760 ns
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 600V
- Test Condition :
- 600V, 60A, 51 Ω, 15V
- Width :
- 5mm
- Datasheets
- FGL60N100BNTD
FGL60N100BNTD Documents

FGL60N100BNTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGL60N100BNTD Description
FGL60N100BNTD 1000V NPT IGBT features ON Semiconductor's proprietary trench design and advanced NPT technology to provide excellent turn-on and switching performance, high avalanche durability, and easy parallel operation. This device provides optimum performance for hard switching applications such as UPS and welding machines.
FGL60N100BNTD Features
-
High-speed switch
-
Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60A
-
High input impedance
-
Built-in fast recovery diode
FGL60N100BNTD Applications
-
UPS
-
Other industries
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