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  5. FGB20N6S2D
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    FGB20N6S2D

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    Mfr.Part #
    FGB20N6S2D
    Manufacturer
    onsemi
    Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Datasheet
    Download
    Description
    IGBT 600V 28A 125W TO263AB
    Stock
    29,406
    In Stock ：
    29,406

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - IGBTs - Single
    Operating Temperature :
    -55°C~150°C TJ
    Power Dissipation :
    125W
    Collector Emitter Voltage (VCEO) :
    2.7V
    Element Configuration :
    Single
    Max Collector Current :
    28A
    Test Condition :
    390V, 7A, 25 Ω, 15V
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Mount :
    Surface Mount
    Published :
    2002
    Voltage - Rated DC :
    600V
    Input Type :
    Standard
    Vce(on) (Max) @ Vge, Ic :
    2.7V @ 15V, 7A
    Lead Free :
    Lead Free
    Reverse Recovery Time :
    31 ns
    Current Rating :
    28A
    Number of Pins :
    3
    Rise Time :
    4.5ns
    Current - Collector Pulsed (Icm) :
    40A
    Packaging :
    Tube
    Mounting Type :
    Surface Mount
    Td (on/off) @ 25°C :
    7.7ns/87ns
    Collector Emitter Breakdown Voltage :
    600V
    Package / Case :
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Collector Emitter Saturation Voltage :
    2.2V
    RoHS Status :
    RoHS Compliant
    Gate Charge :
    30nC
    Max Power Dissipation :
    125W
    Switching Energy :
    25μJ (on), 58μJ (off)
    Datasheets
    FGB20N6S2D
    Introducing Transistors - IGBTs - Single onsemi FGB20N6S2D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature：-55°C~150°C TJ, Number of Pins：3, Mounting Type：Surface Mount, Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FGB20N6S2D pinout, FGB20N6S2D datasheet PDF, FGB20N6S2D amp .Beyond Transistors - IGBTs - Single onsemi FGB20N6S2D ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi FGB20N6S2D


    FGB20N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

    FGB20N6S2D Description


    The FGB20N6S2D is a 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth? Diode. The FGH20N6S2D, FGP20N6S2D, and FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs that combine a strong avalanche capability with the fast switching speed of SMPS IGBTs (UIS). These LGC components decrease gate drive power requirements and shorten delay periods. These components are best suited for high voltage switched mode power supply applications where quick switching times, minimal conduction loss, and UIS capabilities are critical requirements.



    FGB20N6S2D Features


    • Low Conduction Loss

    • Low Eon

    • Soft Recovery Diode

    • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC

    • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V

    • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

    • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ

    • 100kHz Operation at 390V, 7A

    • 200kHZ Operation at 390V, 5A

    • 600V Switching SOA Capability



    FGB20N6S2D Applications


    • Push-Pull circuits

    • Uninterruptible power supplies

    • Zero voltage and zero current switching circuits

    • Power Factor Correction (PFC) circuits

    • Full bridge topologies

    • Half bridge topologies


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