FGB20N6S2D
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- Mfr.Part #
- FGB20N6S2D
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 28A 125W TO263AB
- Stock
- 29,406
- In Stock ：
- 29,406
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Packaging :
- Tube
- Power Dissipation :
- 125W
- Collector Emitter Saturation Voltage :
- 2.2V
- Mount :
- Surface Mount
- Td (on/off) @ 25°C :
- 7.7ns/87ns
- Max Collector Current :
- 28A
- Number of Pins :
- 3
- Max Power Dissipation :
- 125W
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Mounting Type :
- Surface Mount
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 7A
- Gate Charge :
- 30nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Switching Energy :
- 25μJ (on), 58μJ (off)
- Published :
- 2002
- Rise Time :
- 4.5ns
- Current - Collector Pulsed (Icm) :
- 40A
- Collector Emitter Breakdown Voltage :
- 600V
- Current Rating :
- 28A
- Reverse Recovery Time :
- 31 ns
- Voltage - Rated DC :
- 600V
- Test Condition :
- 390V, 7A, 25 Ω, 15V
- Datasheets
- FGB20N6S2D
FGB20N6S2D Documents
FGB20N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGB20N6S2D Description
The FGB20N6S2D is a 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth? Diode. The FGH20N6S2D, FGP20N6S2D, and FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs that combine a strong avalanche capability with the fast switching speed of SMPS IGBTs (UIS). These LGC components decrease gate drive power requirements and shorten delay periods. These components are best suited for high voltage switched mode power supply applications where quick switching times, minimal conduction loss, and UIS capabilities are critical requirements.
FGB20N6S2D Features
-
Low Conduction Loss
-
Low Eon
-
Soft Recovery Diode
-
Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
-
Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
-
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
-
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
-
100kHz Operation at 390V, 7A
-
200kHZ Operation at 390V, 5A
-
600V Switching SOA Capability
FGB20N6S2D Applications
-
Push-Pull circuits
-
Uninterruptible power supplies
-
Zero voltage and zero current switching circuits
-
Power Factor Correction (PFC) circuits
-
Full bridge topologies
-
Half bridge topologies
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| FGB20N60SF | onsemi | 25,072 | IGBT FIELD STOP 600V 40A D2PAK |
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| FGB20N6S2 | onsemi | 400 | N-CHANNEL IGBT |
| FGB20N6S2 | onsemi | 400 | IGBT 600V 28A 125W TO263AB |
| FGB20N6S2D | onsemi | 6,895 | N-CHANNEL IGBT |
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