FGB20N60SF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.31247g

Packaging :

Tape and Reel (TR)

Gate Charge :

65nC

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

20V

Width :

9.65mm

Turn On Time :

28 ns

Collector Emitter Saturation Voltage :

2.2V

Published :

2010

RoHS Status :

ROHS3 Compliant

Power - Max :

208W

Test Condition :

400V, 20A, 10 Ω, 15V

Max Breakdown Voltage :

600V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Radiation Hardening :

No

IGBT Type :

Field Stop

Factory Lead Time :

4 Weeks

Input Type :

Standard

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Max Power Dissipation :

208W

Turn Off Time-Nom (toff) :

123 ns

Collector Emitter Voltage (VCEO) :

600V

Additional Feature :

LOW CONDUCTION LOSS

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Collector Pulsed (Icm) :

60A

Max Collector Current :

40A

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

13ns/90ns

Length :

10.67mm

HTS Code :

8541.29.00.95

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

370μJ (on), 160μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Base Part Number :

FGB20N60

Height :

4.83mm

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Fall Time-Max (tf) :

48ns

Mount :

Surface Mount

Element Configuration :

Single