FGB20N60SFD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Field Stop

Max Collector Current :

40A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Td (on/off) @ 25°C :

13ns/90ns

Case Connection :

COLLECTOR

Height :

4.83mm

Additional Feature :

LOW CONDUCTION LOSS

Reverse Recovery Time :

34 ns

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

60A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Factory Lead Time :

5 Weeks

Fall Time-Max (tf) :

48ns

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Gate Charge :

65nC

Width :

9.65mm

Max Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

2.8V

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Input Type :

Standard

Packaging :

Tape and Reel (TR)

Power Dissipation :

83W

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Power - Max :

208W

RoHS Status :

ROHS3 Compliant

Gate-Emitter Thr Voltage-Max :

6.5V

Number of Elements :

1

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Weight :

1.31247g

Turn On Time :

28 ns

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

600V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Turn Off Time-Nom (toff) :

123 ns

Published :

2013

Element Configuration :

Single

Test Condition :

400V, 20A, 10 Ω, 15V

Switching Energy :

370μJ (on), 160μJ (off)

Transistor Application :

POWER CONTROL

Max Power Dissipation :

208W

Length :

10.67mm

Base Part Number :

FGB20N60

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Voltage (VCEO) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99