FGA25N120FTD
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- Mfr.Part #
- FGA25N120FTD
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 1200V 50A 313W TO3P
- Stock
- 14
- In Stock ：
- 14
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-3P-3, SC-65-3
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 25A
- Number of Pins :
- 3
- Max Power Dissipation :
- 313W
- Turn On Delay Time :
- 48 ns
- Input Type :
- Standard
- Gate Charge :
- 160nC
- Lead Free :
- Lead Free
- Current - Collector Pulsed (Icm) :
- 75A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- IGBT Type :
- Trench Field Stop
- Switching Energy :
- 340μJ (on), 900μJ (off)
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Element Configuration :
- Single
- Test Condition :
- 600V, 25A, 15 Ω, 15V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 210 ns
- Power - Max :
- 313W
- Max Collector Current :
- 50A
- Reverse Recovery Time :
- 770 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Td (on/off) @ 25°C :
- 48ns/210ns
- RoHS Status :
- RoHS Compliant
- Datasheets
- FGA25N120FTD
FGA25N120FTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGA25N120FTD Description
The FGA25N120FTD is a high voltage and high current IGBT with NPT Trench Technology. The FGA25N120FTD IGBT can switch 1200V with a current rating of up to 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver-side designs.
FGA25N120FTD Features
-
Field Stop Trench Technology
-
High Input Impedance
-
High-Speed Switching
-
RoHS Complaint
-
Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A
FGA25N120FTD Applications
Induction Heating
Microwave Oven
UPS
AC & DC motor controls
general-purpose inverters
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