FGA20S140P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Published :

2013

IGBT Type :

Trench Field Stop

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

RoHS Status :

ROHS3 Compliant

Length :

15.8mm

Max Power Dissipation :

272W

Current - Collector Pulsed (Icm) :

60A

Weight :

6.401g

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.2V

Max Collector Current :

40A

Turn Off Time-Nom (toff) :

776 ns

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

1.4kV

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Thr Voltage-Max :

7.5V

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

25V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 20A

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1400V

Factory Lead Time :

6 Weeks

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Number of Pins :

3

Gate Charge :

203.5nC

Pbfree Code :

yes

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

20.1mm

Mounting Type :

Through Hole

Turn On Time :

322 ns

Input Type :

Standard

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Voltage (VCEO) :

1.4kV

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

ECCN Code :

EAR99

Power - Max :

272W