FGA25N120ANTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

FGA25N120A

Current - Collector Pulsed (Icm) :

90A

Input Type :

Standard

Switching Energy :

4.1mJ (on), 960μJ (off)

Test Condition :

600V, 25A, 10 Ω, 15V

Max Power Dissipation :

312W

Polarity/Channel Type :

N-Channel

Height :

23.8mm

Power Dissipation :

312mW

Width :

5mm

IGBT Type :

NPT and Trench

Voltage - Rated DC :

1.2kV

Turn On Delay Time :

50 ns

Collector Emitter Voltage (VCEO) :

1.2kV

Mounting Type :

Through Hole

Published :

2004

Terminal Finish :

Tin (Sn)

Gate-Emitter Voltage-Max :

20V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Gate-Emitter Thr Voltage-Max :

7.5V

Package / Case :

TO-3P-3, SC-65-3

Max Collector Current :

50A

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.65V @ 15V, 50A

Element Configuration :

Single

Rise Time :

60ns

Continuous Collector Current :

50A

Length :

15.8mm

Mount :

Through Hole

Radiation Hardening :

No

Turn-Off Delay Time :

190 ns

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Number of Pins :

3

Packaging :

Tube

Gate Charge :

200nC

RoHS Status :

ROHS3 Compliant

Reverse Recovery Time :

350 ns

Td (on/off) @ 25°C :

50ns/190ns

JESD-609 Code :

e3

Weight :

6.40101g

Collector Emitter Breakdown Voltage :

1.2kV

Current Rating :

50A

Collector Emitter Saturation Voltage :

2.65V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C