FF75R12RT4HOSA1

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Mfr.Part #
FF75R12RT4HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 75A 395W
Stock
10
In Stock :
10

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Transistor Application :
POWER CONTROL
Current - Collector (Ic) (Max) :
75A
Package / Case :
Module
Surface Mount :
No
Number of Elements :
2
Mounting Type :
Chassis Mount
Published :
2002
Terminal Position :
UPPER
Power - Max :
395W
Voltage - Collector Emitter Breakdown (Max) :
1200V
Pbfree Code :
No
ECCN Code :
EAR99
Number of Terminations :
5
Polarity/Channel Type :
N-Channel
Turn On Time :
185 ns
Terminal Form :
UNSPECIFIED
Factory Lead Time :
16 Weeks
Input Capacitance (Cies) @ Vce :
4.3nF @ 25V
Configuration :
2 Independent
Turn Off Time-Nom (toff) :
490 ns
Input :
Standard
Transistor Element Material :
SILICON
Element Configuration :
Dual
Halogen Free :
Not Halogen Free
Case Connection :
Isolated
Moisture Sensitivity Level (MSL) :
Not Applicable
Pin Count :
7
RoHS Status :
RoHS Compliant
Lead Free :
Lead Free
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 75A
JESD-30 Code :
R-XUFM-X5
NTC Thermistor :
No
Operating Temperature :
-40°C~150°C
IGBT Type :
Trench Field Stop
Current - Collector Cutoff (Max) :
1mA
Datasheets
FF75R12RT4HOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF75R12RT4HOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Module, Mounting Type:Chassis Mount, Number of Terminations:5, Operating Temperature:-40°C~150°C, FF75R12RT4HOSA1 pinout, FF75R12RT4HOSA1 datasheet PDF, FF75R12RT4HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF75R12RT4HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF75R12RT4HOSA1


FF75R12RT4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF75R12RT4HOSA1                              Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FF75R12RT4HOSA1                               Applications

· High Power Converters

· Motor Drives

· UPS Systems

 

FF75R12RT4HOSA1                               Features

· Extended Operation Temperature Tyjop

· Low Switching Losses

· Low VCEsat

· Tvjop=150

· VCEsat with positiveTemperature Coefficient

 

Mechanical Features

· lsolated Base Plate

· Standard Housing


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