FDY4000CZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Published :

2006

Element Configuration :

Dual

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

6

Number of Elements :

2

Max Power Dissipation :

625mW

Power Dissipation :

625mW

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

600mA 350mA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Number of Pins :

6

Continuous Drain Current (ID) :

600mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

13ns

Turn-Off Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-20V

Package / Case :

SOT-563, SOT-666

Current Rating :

600mA

Voltage - Rated DC :

600V

Series :

PowerTrench®

Height :

500μm

Resistance :

700mOhm

Length :

1.6mm

RoHS Status :

ROHS3 Compliant

Additional Feature :

ESD PROTECTED

Width :

1.2mm

Threshold Voltage :

600mV

Fall Time (Typ) :

13 ns

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power - Max :

446mW

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Weight :

32mg

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V