FDY2001PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

150mA

Package / Case :

SOT-563, SOT-666

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Pin Count :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.15A

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

8Ohm

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

JESD-30 Code :

R-PDSO-F6

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

DS Breakdown Voltage-Min :

20V

Series :

PowerTrench®

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

8 Ω @ 150mA, 4.5V

FET Type :

2 P-Channel (Dual)

Power - Max :

446mW

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON