FDY2000PZ
- Mfr.Part #
- FDY2000PZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 830
- In Stock :
- 830
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Width :
- 1.2mm
- Power Dissipation :
- 630mW
- Terminal Form :
- Flat
- Number of Elements :
- 2
- Rise Time :
- 13ns
- Power - Max :
- 446mW
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 4.5V
- FET Type :
- 2 P-Channel (Dual)
- Drain Current-Max (Abs) (ID) :
- 0.35A
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 350mA
- Max Power Dissipation :
- 625mW
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 350mA, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Element Configuration :
- Dual
- Pbfree Code :
- yes
- Turn On Delay Time :
- 6 ns
- Number of Terminations :
- 6
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Published :
- 2006
- Fall Time (Typ) :
- 13 ns
- Factory Lead Time :
- 10 Weeks
- Threshold Voltage :
- -1.03V
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds :
- 100pF @ 10V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Breakdown Voltage :
- -20V
- Height :
- 600μm
- Package / Case :
- SOT-563, SOT-666
- Length :
- 1.7mm
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Weight :
- 32mg
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 8 ns
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDY2000PZ
FDY2000PZ Documents

FDY2000PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDY2000PZ Description
The dual P-channel MOSFET uses Fairchild's advanced power trench process to optimize rdson) @ Vas=-2.5V.
FDY2000PZ Features
·-350mA-20VRDsoN=1.2Ω@Vs=-4.5V
Rpsin=1.6Ω@Vas=-2.5V
·ESD protection diode(note 3)
RoHS Compliant
FDY2000PZ Applications
·Li-lon Battery Pack
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