FDY2000PZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

0.35A

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Terminal Form :

Flat

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Length :

1.7mm

Turn On Delay Time :

6 ns

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Lead Free :

Lead Free

Threshold Voltage :

-1.03V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Number of Pins :

6

Weight :

32mg

Rise Time :

13ns

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Height :

600μm

Series :

PowerTrench®

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

13 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

350mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Width :

1.2mm

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

JESD-609 Code :

e3

Turn-Off Delay Time :

8 ns

Max Power Dissipation :

625mW

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Power - Max :

446mW

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

Power Dissipation :

630mW

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2006

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE