FDW258P
- Mfr.Part #
- FDW258P
- Manufacturer
- onsemi
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9A 8TSSOP
- Stock
- 72,326
- In Stock :
- 72,326
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 4.5V
- Drain Current-Max (Abs) (ID) :
- 9A
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Terminal Form :
- Gull wing
- Qualification Status :
- COMMERCIAL
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.011Ohm
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Surface Mount :
- yes
- Terminal Finish :
- Tin
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 12V
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.049pF @ 5V
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 9A, 4.5V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.3W Ta
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Datasheets
- FDW258P
FDW258P Documents
P-Channel Tape & Reel (TR) 11m Ω @ 9A, 4.5V ±8V 5.049pF @ 5V 73nC @ 4.5V 12V 8-TSSOP (0.173, 4.40mm Width)
FDW258P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.049pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDW258P Features
a 12V drain to source voltage (Vdss)
FDW258P Applications
There are a lot of Rochester Electronics, LLC
FDW258P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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