FDW258P
- Mfr.Part #
- FDW258P
- Manufacturer
- onsemi
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9A 8TSSOP
- Stock
- 72,326
- In Stock :
- 72,326
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Drain-source On Resistance-Max :
- 0.011Ohm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 9A, 4.5V
- Drain Current-Max (Abs) (ID) :
- 9A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G8
- Vgs (Max) :
- ±8V
- Number of Terminations :
- 8
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 4.5V
- Power Dissipation-Max :
- 1.3W Ta
- Terminal Position :
- Dual
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 12V
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.049pF @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 12V
- Datasheets
- FDW258P
P-Channel Tape & Reel (TR) 11m Ω @ 9A, 4.5V ±8V 5.049pF @ 5V 73nC @ 4.5V 12V 8-TSSOP (0.173, 4.40mm Width)
FDW258P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.049pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDW258P Features
a 12V drain to source voltage (Vdss)
FDW258P Applications
There are a lot of Rochester Electronics, LLC
FDW258P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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