FDS7296N3

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Mfr.Part #
FDS7296N3
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 15A 8SO
Stock
12,604
In Stock :
12,604

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
NICKEL PALLADIUM GOLD
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Pbfree Code :
yes
Pin Count :
8
Terminal Position :
Dual
Series :
PowerTrench®
Drain Current-Max (Abs) (ID) :
15A
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Number of Terminations :
8
Pulsed Drain Current-Max (IDM) :
60A
Current - Continuous Drain (Id) @ 25°C :
15A Ta
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Qualification Status :
COMMERCIAL
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PDSO-G8
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.008Ohm
Rds On (Max) @ Id, Vgs :
8m Ω @ 15A, 10V
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1.54pF @ 15V
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
3W Ta
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
189 mJ
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
3V @ 250µA
DS Breakdown Voltage-Min :
30V
Number of Elements :
1
JESD-609 Code :
e4
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
260
Datasheets
FDS7296N3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS7296N3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Mounting Type:Surface Mount, FDS7296N3 pinout, FDS7296N3 datasheet PDF, FDS7296N3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS7296N3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS7296N3


N-Channel Tape & Reel (TR) 8m Ω @ 15A, 10V ±20V 1.54pF @ 15V 32nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

FDS7296N3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 189 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.54pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 15A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDS7296N3 Features


the avalanche energy rating (Eas) is 189 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)


FDS7296N3 Applications


There are a lot of Rochester Electronics, LLC
FDS7296N3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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