FDS7082N3
- Mfr.Part #
- FDS7082N3
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17.5A 8SO
- Stock
- 2,163
- In Stock :
- 2,163
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Ta
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Drain-source On Resistance-Max :
- 0.006Ohm
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e4
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 17.5A
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 3W Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Pin Count :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 30V
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 17.5A, 10V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.271pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDS7082N3

N-Channel Tape & Reel (TR) 6m Ω @ 17.5A, 10V ±20V 2.271pF @ 15V 53nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS7082N3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.271pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 17.5A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDS7082N3 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7082N3 Applications
There are a lot of Rochester Electronics, LLC
FDS7082N3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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