FDS7060N7

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

360 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

NICKEL PALLADIUM GOLD

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

60A

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

5m Ω @ 19A, 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.005ohm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

3.274pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Pbfree Code :

yes

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

19A

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3W Ta

JESD-30 Code :

R-PDSO-G8