FDS7060N7

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Mfr.Part #
FDS7060N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 19A 8SO
Stock
49,173
In Stock :
49,173

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 5V
Rds On (Max) @ Id, Vgs :
5m Ω @ 19A, 10V
Number of Terminations :
8
Avalanche Energy Rating (Eas) :
360 mJ
Mounting Type :
Surface Mount
FET Type :
N-Channel
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Peak Reflow Temperature (Cel) :
260
Packaging :
Tape and Reel (TR)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C :
19A Ta
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain-source On Resistance-Max :
0.005ohm
Pin Count :
8
Vgs (Max) :
±20V
Terminal Position :
Dual
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
NICKEL PALLADIUM GOLD
Series :
PowerTrench®
Qualification Status :
COMMERCIAL
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
19A
Pulsed Drain Current-Max (IDM) :
60A
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
JESD-30 Code :
R-PDSO-G8
JESD-609 Code :
e4
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
30V
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
3.274pF @ 15V
DS Breakdown Voltage-Min :
30V
Power Dissipation-Max :
3W Ta
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS7060N7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS7060N7 pinout, FDS7060N7 datasheet PDF, FDS7060N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS7060N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS7060N7


N-Channel Tape & Reel (TR) 5m Ω @ 19A, 10V ±20V 3.274pF @ 15V 56nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

FDS7060N7 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.274pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 19A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDS7060N7 Features


the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)


FDS7060N7 Applications


There are a lot of Rochester Electronics, LLC
FDS7060N7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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