FDS7060N7
- Mfr.Part #
- FDS7060N7
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A 8SO
- Stock
- 49,173
- In Stock :
- 49,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 5V
- Surface Mount :
- yes
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- DS Breakdown Voltage-Min :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.274pF @ 15V
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- Pulsed Drain Current-Max (IDM) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 19A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.005ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 3W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Pin Count :
- 8
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 19A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- FDS7060N7
FDS7060N7 Documents

N-Channel Tape & Reel (TR) 5m Ω @ 19A, 10V ±20V 3.274pF @ 15V 56nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS7060N7 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.274pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 19A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDS7060N7 Features
the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7060N7 Applications
There are a lot of Rochester Electronics, LLC
FDS7060N7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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