FDS7288N3
- Mfr.Part #
- FDS7288N3
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A 8SO
- Stock
- 2,202
- In Stock :
- 2,202
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3W Ta
- Rise Time :
- 11ns
- Turn-Off Delay Time :
- 45 ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- 8-SO
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 15V
- Continuous Drain Current (ID) :
- 20A
- Fall Time (Typ) :
- 32 ns
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 8
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Voltage - Rated DC :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Lead Free :
- Lead Free
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 4.5mOhm
- Rds On (Max) @ Id, Vgs :
- 4.5mOhm @ 20.5A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Power Dissipation :
- 3W
- Input Capacitance :
- 3.3nF
- Series :
- PowerTrench®
- Current Rating :
- 20.5A
- Threshold Voltage :
- 1.8V
- Rds On Max :
- 4.5 mΩ
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Datasheets
- FDS7288N3

N-Channel Tape & Reel (TR) 4.5mOhm @ 20.5A, 10V ±20V 3300pF @ 15V 69nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS7288N3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3300pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 4.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.8V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDS7288N3 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 4.5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
FDS7288N3 Applications
There are a lot of ON Semiconductor
FDS7288N3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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