FDP7N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Pulsed Drain Current-Max (IDM) :

26A

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Lead Free :

Lead Free

Turn-Off Delay Time :

40 ns

Packaging :

Tube

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3.25A, 10V

Avalanche Energy Rating (Eas) :

275 mJ

Power Dissipation :

147W

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Length :

10.67mm

Vgs (Max) :

±30V

Rise Time :

30ns

Series :

UniFET-II™

Package / Case :

TO-220-3

Resistance :

1.25mOhm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Weight :

1.8g

Fall Time (Typ) :

25 ns

Width :

4.83mm

Mounting Type :

Through Hole

Turn On Delay Time :

17.5 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Mount :

Through Hole

Element Configuration :

Single

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

20.4mm

Threshold Voltage :

3V

Continuous Drain Current (ID) :

6.5A

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Power Dissipation-Max :

147W Tc