FDP7N60NZ
- Mfr.Part #
- FDP7N60NZ
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 8,631
- In Stock :
- 8,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.83mm
- Factory Lead Time :
- 5 Weeks
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3V
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 275 mJ
- Resistance :
- 1.25mOhm
- Weight :
- 1.8g
- Fall Time (Typ) :
- 25 ns
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Power Dissipation-Max :
- 147W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Power Dissipation :
- 147W
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 1.25 Ω @ 3.25A, 10V
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 26A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Turn On Delay Time :
- 17.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Breakdown Voltage :
- 600V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Series :
- UniFET-II™
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Published :
- 2010
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 6.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Rise Time :
- 30ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 25V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 40 ns
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Height :
- 20.4mm
- Datasheets
- FDP7N60NZ

N-Channel Tube 1.25 Ω @ 3.25A, 10V ±30V 730pF @ 25V 17nC @ 10V TO-220-3
FDP7N60NZ Description
UniFETTMII MOSFET is a high voltage MOSFET series of Xiantong Semiconductor, based on advanced planar stripe and DMOS technology. This advanced MOSFET series has the lowest on-resistance in planar MOSFET, as well as superior switching performance and higher avalanche energy intensity. In addition, the internal gate source ESD diode allows the UniFET I MOSFET to withstand more than 2KV HBM surge stress. The device family is suitable for switching power supply inverter applications such as power factor correction (PFC), flat panel display (FPD), TV power supply ATX and electronic lamp ballast.
FDP7N60NZ Applications
switching power supply inverter applications
FDP7N60NZ Features
the lowest on-resistance in planar MOSFET
superior switching performance
higher avalanche energy intensity
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