FDP7N60NZ

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Mfr.Part #
FDP7N60NZ
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Stock
8,631
In Stock :
8,631

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
4.83mm
Factory Lead Time :
5 Weeks
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
3V
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
275 mJ
Resistance :
1.25mOhm
Weight :
1.8g
Fall Time (Typ) :
25 ns
Number of Terminations :
3
Number of Pins :
3
Power Dissipation-Max :
147W Tc
Current - Continuous Drain (Id) @ 25°C :
6.5A Tc
Power Dissipation :
147W
Number of Elements :
1
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
1.25 Ω @ 3.25A, 10V
Length :
10.67mm
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
26A
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Turn On Delay Time :
17.5 ns
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Drain to Source Breakdown Voltage :
600V
Lead Free :
Lead Free
JEDEC-95 Code :
TO-220AB
Max Junction Temperature (Tj) :
150°C
Mounting Type :
Through Hole
Radiation Hardening :
No
Series :
UniFET-II™
Vgs (Max) :
±30V
Packaging :
Tube
Published :
2010
Number of Channels :
1
Gate to Source Voltage (Vgs) :
30V
Vgs(th) (Max) @ Id :
5V @ 250μA
Continuous Drain Current (ID) :
6.5A
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Rise Time :
30ns
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
730pF @ 25V
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3
Mount :
Through Hole
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
40 ns
Element Configuration :
Single
ECCN Code :
EAR99
Height :
20.4mm
Datasheets
FDP7N60NZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP7N60NZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, FDP7N60NZ pinout, FDP7N60NZ datasheet PDF, FDP7N60NZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP7N60NZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP7N60NZ


N-Channel Tube 1.25 Ω @ 3.25A, 10V ±30V 730pF @ 25V 17nC @ 10V TO-220-3

FDP7N60NZ   Description

 

  UniFETTMII MOSFET is a high voltage MOSFET series of Xiantong Semiconductor, based on advanced planar stripe and DMOS technology. This advanced MOSFET series has the lowest on-resistance in planar MOSFET, as well as superior switching performance and higher avalanche energy intensity. In addition, the internal gate source ESD diode allows the UniFET I MOSFET to withstand more than 2KV HBM surge stress. The device family is suitable for switching power supply inverter applications such as power factor correction (PFC), flat panel display (FPD), TV power supply ATX and electronic lamp ballast.


FDP7N60NZ    Applications


switching power supply inverter applications 


FDP7N60NZ     Features


the lowest on-resistance in planar MOSFET

superior switching performance 

higher avalanche energy intensity


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