FDP7N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

30ns

Published :

2010

Pulsed Drain Current-Max (IDM) :

26A

Resistance :

1.25mOhm

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Height :

20.4mm

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Element Configuration :

Single

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

147W

Avalanche Energy Rating (Eas) :

275 mJ

Length :

10.67mm

Factory Lead Time :

5 Weeks

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Weight :

1.8g

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3.25A, 10V

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation-Max :

147W Tc

Lead Free :

Lead Free

Mount :

Through Hole

Number of Elements :

1

Threshold Voltage :

3V

Width :

4.83mm

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

UniFET-II™

Turn-Off Delay Time :

40 ns

Turn On Delay Time :

17.5 ns

Number of Channels :

1

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Pins :

3

Continuous Drain Current (ID) :

6.5A

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

JEDEC-95 Code :

TO-220AB