FDP79N15
- Mfr.Part #
- FDP79N15
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 79A TO220-3
- Stock
- 6,035
- In Stock :
- 6,035
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.41pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.03Ohm
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Terminations :
- 3
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 79A
- Power Dissipation-Max :
- 463W Tc
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 1669 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 39.5A, 10V
- Drain to Source Voltage (Vdss) :
- 150V
- Current - Continuous Drain (Id) @ 25°C :
- 79A Tc
- Series :
- UniFET™
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pulsed Drain Current-Max (IDM) :
- 316A
- Additional Feature :
- FAST SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Datasheets
- FDP79N15

N-Channel Tube 30m Ω @ 39.5A, 10V ±30V 3.41pF @ 25V 73nC @ 10V 150V TO-220-3
FDP79N15 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1669 mJ.A device's maximum input capacitance is 3.41pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 79A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 316A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 150V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FDP79N15 Features
the avalanche energy rating (Eas) is 1669 mJ
based on its rated peak drain current 316A.
a 150V drain to source voltage (Vdss)
FDP79N15 Applications
There are a lot of Rochester Electronics, LLC
FDP79N15 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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