FDP7N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Continuous Drain Current (ID) :

7A

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn On Delay Time :

6 ns

Number of Terminations :

3

Packaging :

Tube

Fall Time (Typ) :

35 ns

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Rise Time :

55ns

Turn-Off Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

270 mJ

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Power Dissipation :

89W

Mount :

Through Hole

Drain-source On Resistance-Max :

0.9Ohm

Height :

16.51mm

Series :

UniFET™

Width :

4.83mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

89W Tc

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

900m Ω @ 3.5A, 10V

Drain Current-Max (Abs) (ID) :

7A

Pulsed Drain Current-Max (IDM) :

28A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Number of Elements :

1