FDN86265P
- Mfr.Part #
- FDN86265P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 800MA SUPERSOT3
- Stock
- 52,199
- In Stock :
- 52,199
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 75V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 5.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Ta
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Weight :
- 30mg
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Published :
- 2017
- Feedback Cap-Max (Crss) :
- 5 pF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Fall Time (Typ) :
- 9.9 ns
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 1.5W Ta
- Series :
- PowerTrench®
- Drain to Source Voltage (Vdss) :
- 150V
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 800mA
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 7.9 ns
- Height :
- 940μm
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Rise Time :
- 2.2ns
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 4.1nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 800mA, 10V
- Length :
- 2.92mm
- FET Type :
- P-Channel
- Vgs (Max) :
- ±25V
- Datasheets
- FDN86265P

P-Channel Tape & Reel (TR) 1.2 Ω @ 800mA, 10V ±25V 210pF @ 75V 4.1nC @ 10V 150V TO-236-3, SC-59, SOT-23-3
FDN86265P Description
The FDN86265P is a single N-channel MOSFET from ON Semiconductor with a temperature range of -55°C to 150°C TJ. This FDN86265P P-Channel MOSFET is made with the innovative PowerTrench? technology, which has been optimized for on-state resistance while yet maintaining excellent switching performance. The maximum drain current of FDN86265P is 0.8A and it has 3 pins, which pin has a different function. It is available in TO-236-3, SC-59, and SOT-23-3 packages way.
FDN86265P Features
? Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
? Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
? Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimized for Low Qg
? This product is optimised for fast switching applications as well as load switch applications
? 100% UIL tested
? RoHS Compliant
FDN86265P Applications
? Active Clamp Switch
? Load Switch
? Switch application
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