FDN8601

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

2.7A

Power Dissipation :

1.5W

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 50V

Fall Time (Typ) :

3.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Vgs (Max) :

±20V

Published :

2010

Width :

2.92mm

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Position :

Dual

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.5W Ta

Length :

1.4mm

Number of Terminations :

3

Terminal Form :

Gull wing

Series :

PowerTrench®

Element Configuration :

Single

Number of Pins :

3

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn On Delay Time :

4.3 ns

Rds On (Max) @ Id, Vgs :

109m Ω @ 1.5A, 10V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Nominal Vgs :

3 V

Threshold Voltage :

3V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

5 pF

Turn-Off Delay Time :

7.8 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Height :

940μm

Weight :

30mg

Rise Time :

1.3ns

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Factory Lead Time :

8 Weeks